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 High-temperature diffusion furnace. In solar cell production silicon has dopant atoms introduced to create a p-type and an n-type region and thereby producing a p-n junction. This doping may be done by high-temperature diffusion, where wafers are placed in a furnace with the dopant introduced as a vapor. There are many other doping silicon methods. In some thin film devices manufacturing, introduction of dopants may occur during the film or layer deposition. High-flow Mass Flow Controller is used to control the amount of dopant gas.
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AFC 310MD
AFC 410MD
AFC 510MD
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AFC 80MD |
AFC 50D |
AFC 202D |
AFC
260/261
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| Diffusion |
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| CVD |
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| Oxidation |
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| Epitaxy |
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| High flow applications |
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best choice |
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